Présentation

The JBX-3050MV series is an electron beam lithography system for mask/reticle fabrication that meets the design rule of 45 to 32 nm. This system features pattern writing with high speed, high accuracy and high reliability, achieved by high-end technology.

CARACTERISTIQUES

Vector scan, Variable shaped beam

50 kV

LaB6 single crystal

</= ± 4 nm (3δ)

</= ± 10 nm

Les caractéristiques de ce produit peuvent changer sans notification.

GALERIE